50A02MH no.7488-1/4 pnp epitaxial planar silicon transistor applications ? low-frequency amplifier, high-speed switching, small motor drive, muting circuit. features ? large current capacitance. ? low collector-to-emitter saturation voltage (resistance). r ce (sat) typ=210m w [i c =0.5a, i b =50ma]. ? small on-resistance (ron). specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit collector-to-base voltage v cbo --50 v collector-to-emitter voltage v ceo --50 v emitter-to-base voltage v ebo -- 5 v collector current i c --500 ma collector current (pulse) i cp -- 1 . 0 a collector dissipation p c mounted on a ceramic board (600mm 2 5 0.8mm) 600 mw junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit collector cutoff current i cbo v cb =--40v, i e =0 --100 na emitter cutoff current i ebo v eb =--4v, i c =0 --100 na dc current gain h fe v ce =--2v, i c =--10ma 200 500 gain-bandwidth product f t v ce =--10v, i c =--50ma 690 mhz output capacitance cob v cb =--10v, f=1mhz 3.8 pf collector-to-emitter saturation voltage v ce (sat) i c =--100ma, i b =--10ma --60 --120 mv base-to-emitter saturation voltage v be (sat) i c =--100ma, i b =--10ma --0.9 --1.2 v marking : am continued on next page. ordering number : enn7488 50A02MH o3103 ts im ta-100701 any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. low-frequency general-purpose amplifier applications package dimensions unit : mm 2194a [50A02MH] sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan 1 : base 2 : emitter 3 : collector sanyo : mcph3 0.25 0.25 0.07 2.1 1.6 2.0 0.65 0.3 0.85 0.15 1 2 3 12 3 (bottom view) (top view) sanyo electric co.,ltd. semiconductor bussiness headquaters tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan http://semicon.sanyo.com/en/network
50A02MH no.7488-2/4 continued from preceding page. ratings parameter symbol conditions min typ max unit collector-to-base breakdown voltage v (br)cbo i c =--10 m a, i e =0 --50 v collector-to-emitter breakdown voltage v (br)ceo i c =--1ma, r be = --50 v emitter-to-base breakdown voltage v (br)ebo i e =--10 m a, i c =0 --5 v turn-on time t on see specified test circuit. 30 ns storage time t stg see specified test circuit. 170 ns fall time t f see specified test circuit. 30 ns switching time test circuit v r r b v cc = --25v v be =5v ++ 50 input output r l 220 f 470 f pw=20 s i b1 d.c. 1% i b2 i c =20i b1 = --20i b2 = --200ma collector-to-emitter voltage, v ce -- mv collector current, i c -- ma base-to-emitter voltage, v be -- v collector current, i c -- ma collector current, i c -- ma dc current gain, h fe 0 0 --100 --50 i c -- v ce it05118 it05119 --200 --150 --300 --250 --500 --450 --400 --350 --200 --600 --400 --800 --1000 --100 --500 --300 --700 --900 0 0 i c -- v be --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --200 --600 --500 --400 --300 --100 i b =0 ta=75 c 25 c --25 c --200 a --1ma --500 a --2ma --5ma --10ma --15ma --50ma --30ma --20ma --25ma v ce = --2v --40ma it05120 3 100 h fe -- i c --1.0 2 3 5 7 --10 2 3 5 7 2 3 5 7 --100 --1000 2 3 5 1000 7 5 7 ta=75 c 25 c --25 c v ce = --2v it05410 --1.0 23 57 --10 23 57 23 57 --100 --100 2 2 3 5 7 3 --10 ta=75 c --25 c 25 c i c / i b =10 v ce (sat) -- i c collector current, i c -- ma collector-to-emitter saturation voltage, v ce (sat) -- mv
50A02MH no.7488-3/4 0 0 100 200 it05046 300 600 400 500 700 40 20 100 120 60 80 140 160 collector dissipation, p c -- mw ambient temperature, ta -- c p c -- ta mounted on a ceramic board(600mm 2 5 0.8mm) collector-to-base voltage, v cb -- v output capacitance, cob -- pf collector current, i c -- ma collector current, i c -- ma collector-to-emitter saturation voltage, v ce (sat) -- mv base-to-emitter saturation voltage, v be (sat) -- v collector current, i c -- ma gain-bandwidth product, f t -- mhz it05122 --1.0 1.0 cob -- v cb --10 2 3 5 7 2 3 5 7 --100 2 3 5 7 10 f=1mhz it05124 v ce (sat) -- i c it05125 v be (sat) -- i c --1.0 23 57 --10 23 57 23 57 --100 --1000 3 --1000 2 3 5 7 2 3 5 7 2 --100 --10 i c / i b =50 ta=75 c --25 c 25 c 2 --1.0 3 5 7 2 --1.0 23 57 --10 23 57 23 57 --100 --1000 ta= --25 c 75 c 25 c i c / i b =20 it05121 --1.0 f t -- i c 23 57 23 57 23 57 --10 --100 --1000 100 1000 5 7 2 3 v ce = --10v it05123 v ce (sat) -- i c --1.0 23 57 --10 23 57 23 57 --100 --1000 --1000 --100 2 3 5 7 2 3 5 7 --10 7 ta=75 c --25 c 25 c i c / i b =20 collector current, i c -- ma collector-to-emitter saturation voltage, v ce (sat) -- mv f=1mhz --0.1 0.1 base current, i b -- ma ron -- i b on resistance, ron -- it06093 7 5 3 2 10 7 5 3 2 7 5 3 2 1.0 100 3 2 57 3 2 57 --1.0 --10 out in 1k 1k i b
50A02MH no.7488-4/4 specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of october, 2003. specifications and information herein are subject to change without notice. ps
|
